How to make efficient use of available energy is attracting increased attention in parallel with the development of natural energy. Next-generation power semiconductors, in which SiC epitaxial wafers developed by Showa Denko are used, are playing a central role in this trend.
We are shaping ideas for the solutions to energy problems through these wafers, which help minimize loss during power use.
These wafers are used in next-generation power semiconductors. Compared with conventional silicon (Si)-based semiconductors, silicon carbide (SiC)-based power semiconductors have superior properties and contribute to the downsizing and higher efficiency of power modules.
This product increases the reliability of SiC-based devices and contributes to the practical use of SiC-based power modules and expansion of the market.
We mass-produce the world’s largest SiC epitaxial wafers, with a diameter of six inches.
We have established the technology to mass-produce thick-film epitaxial wafers for high-voltage power semiconductors.